PART |
Description |
Maker |
V53C104H V53C104HP50 V53C104HP55L V53C104HP40 V53C |
Ultra-High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
|
IS65WV25616BLL IS65WV25616BLL-55TA1 IS65WV25616BLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
BS616UV4010EI BS616UV4010 BS616UV4010BC BS616UV401 |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
|
BSI[Brilliance Semiconductor]
|
BS616UV4016AIP10 BS616UV4016DIG10 BS616UV4016ECG10 |
Ultra Low Power CMOS SRAM 256K X 16 bit Ultra Low Power CMOS SRAM 256K X 16 bit
|
Brilliance Semiconducto...
|
KM616U4000BZ |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
IC62LV2568L-70TI IC62LV2568L IC62LV2568L-100B IC62 |
256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM 256K × 8低功耗和低成本吓的CMOS静态RAM
|
Lattice Semiconductor, Corp. ICSI[Integrated Circuit Solution Inc]
|
GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM 70ns; Ultra low power 64K x 16 CMOS SRAM 85ns; Ultra low power 64K x 16 CMOS SRAM 100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
AS6WA25616-TI AS6WA25616-TC AS6WA25616-BI AS6WA256 |
3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable 3.0V to 3.6V 256K6 IntelliwattTM low-power CMOS SRAM with one chip enable 3.0V.6V 256K IntelliwattTM同一个芯片中低功耗CMOS SRAM的启 3.0V to 3.6V 256K X 6 IntelliwattTM low-power CMOS SRAM with one chip enable
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Alliance Semiconductor
|
A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only 70ns 20mA 256K x 8bit CMOS 5.0V-only 100ns 20mA 256K x 8bit CMOS 5.0V-only 120ns 20mA 256K x 8bit CMOS 5.0V-only 150ns 20mA 256K x 8bit CMOS 5.0V-only 90ns 20mA 256K x 8bit CMOS 5.0V-only 55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor]
|
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|